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Organometallic Vapor-Phase Epitaxy

Organometallic Vapor-Phase Epitaxy

Gerald B. Stringfellow

(1999)

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Abstract

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.

  • Updated with new emphasis on the semiconducting nitride materials—GaN and its alloys with In and Al
  • Emphasizes the newly understood aspects of surface processes
  • Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics