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Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

R. Szweda

(2000)

Additional Information

Book Details

Abstract

The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology.

The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.


For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Table of Contents

Section Title Page Action Price
Front Cover Cover
Gallium Arsenide Electronic Materials and Devices: A Market and Technology Overview 1999–2004 i
Copyright Page ii
Contents iii
List of Tables ix
List of Figures xiii
Chapter 1. Introduction 1
1.1 Report Structure 1
1.2 Products 2
1.3 Markets 3
1.4 Regions 3
1.5 Research Background 3
Chapter 2. Executive Summary 5
2.1 Introduction 5
2.2 Materials Properties 7
2.3 The GaAs Marketplace 7
2.4 Market Evaluation and Forecast 8
2.5 The Supplier Situation 9
2.6 Conclusions 15
Chapter 3. Substrate Markets 17
3.1 Introduction 17
3.2 Worldwide Market for SI GaAs Substrates 1999–2004 17
3.3 The SI GaAs Substrate Business 25
3.4 Market Share 34
Chapter 4. Merchant GaAs Epitaxial Wafer Markets 37
4.1 Introduction 37
4.2 Epiwafer Industry Overview 40
4.3 Epiwafer Market Analysis and Forecast 41
4.4 Epiwafer Markets by Epitaxial Growth Technique 46
4.5 Epitaxial Wafer Markets by Substrate Type 49
4.6 Epitaxial Wafer Markets by Geographic Region 50
4.7 Epitaxial Wafer Markets by Application 55
4.8 Epiwafer Pricing Trends 56
4.9 MBE Epiwafer Suppliers 58
4.10 MOVPE Epiwafer Suppliers 59
4.11 Silicon–Germanium Epiwafer Markets 59
Chapter 5. Application Market Overview 63
5.1 Introduction 63
5.2 Worldwide Market for GaAs Devices 63
5.3 The Worldwide GaAs Electronics Business 65
5.4 Merchant vs. Captive Markets for GaAs Devices 72
5.5 Market by Geographical Region 73
5.6 Telecommunications Markets for GaAs Electronic Devices 76
5.7 Wireless Data Communications 103
5.8 Consumer Markets for GaAs Electronic Devices 112
5.9 Computer Markets for GaAs Electronic Devices 116
5.10 Industrial Markets for GaAs Electronic Devices 121
5.11 Military/Aerospace Markets for GaAs Electronic Devices 123
5.12 Automotive Markets for GaAs Electronic Devices 134
5.13 Other Markets for GaAs Electronic Devices 144
Chapter 6. Gallium Arsenide Crystal Growth 147
6.1 Introduction 147
6.2 Crystal Growth 149
6.3 Crystal Growth Technologies 151
6.4 Substrates 157
Chapter 7. Epitaxy and Device Processing of Gallium Arsenide 161
7.1 Epitaxial Growth 161
7.2 MOVPE 163
7.3 Epitaxial Precursor Materials 165
7.4 Commercial MOVPE Reactors 167
7.5 MBE 174
7.6 MBE Growth of Other Semiconductors 180
7.7 UHV-CVD of SiGe 180
7.8 In situ Monitoring 181
7.9 Alternative Fabrication Processes 185
7.10 Ion Implantation 186
7.11 Device Processing 188
Chapter 8. Company Profiles 195
8.1 Agilent Technologies Inc 196
8.2 AIXTRON AG 198
8.3 Alpha Industries Inc 200
8.4 ANADIGICS Inc 203
8.5 Apex Co Ltd 206
8.6 Applied Epi Inc 206
8.7 Atmel Corp 208
8.8 ATRAMET (Atomergic Chemetals Corp) 211
8.9 AWSC (Advanced Wireless Semiconductor Co) 211
8.10 AXT (American Xtal Technology) 212
8.11 Caswell Technology 214
8.12 Celeritek Inc 216
8.13 CMK Ltd 218
8.14 Conexant Systems Inc 218
8.15 Dowa Mining Co Ltd 221
8.16 EMCORE Corp 223
8.17 Endwave Corp 228
8.18 Epichem Ltd 229
8.19 Epitronics Corp 230
8.20 Filtronic Solid State 233
8.21 Freiberger Compound Materials GmbH 235
8.22 Fujitsu Quantum Devices Ltd 236
8.23 Furukawa Electric Ltd 239
8.24 GCS 240
8.25 GIGA A/S 241
8.26 Hexawave Inc 242
8.27 Hitachi Cable Ltd 243
8.28 Hitachi Ltd 245
8.29 Hittite Microwave Corp 247
8.30 Honeywell Technology Center 248
8.31 Infineon Technologies AG 250
8.32 Intelligent Epitaxy Technology 253
8.33 IQE PIc 253
8.34 Japan Energy Corp 256
8.35 Kopin Corp 257
8.36 Litton Airtron 259
8.37 M/A-COM Inc 260
8.38 M/A-COM III–V Materials Group 262
8.39 Matsushita Electronics Corp 263
8.4O MBE Technology Pte Ltd 266
8.41 Micro Wave Sys 267
8.42 MicroWave Technology Inc 267
8.43 Mitsubishi Electric Corp 269
8.44 Motorola Inc 272
8.45 Murata Manufacturing Co Ltd 275
8.46 NEC Corp 277
8.47 Oki Semiconductor 279
8.48 OMMIC 282
8.49 Oxford Instruments Plasma Technology 283
8.50 Picogiga 285
8.51 Procomp Informatics Ltd 286
8.52 Raytheon RF Components 287
8.53 RF Micro Devices Inc (RFMD) 288
8.54 Riber SA 292
8.55 Sanders 294
8.56 Sanyo Electric Co Ltd 295
8.57 Sharp Corp 297
8.58 Showa Denko 299
8.59 SiGe Microsystems Inc 300
8.60 Sony Corp 301
8.61 Stanford Microdevices (SMDI) 303
8.62 Sumitomo Electric Industries Ltd 304
8.63 Surface Technology Systems Ltd 307
8.64 Tegal Corp 308
8.65 Teledyne Electronic Technologies 310
8.66 TLC Precision Wafer Technology 311
8.67 Toshiba Microelectronics Center 312
8.68 Trikon Technologies Inc 314
8.69 TriQuint Semiconductor Inc 317
8.70 TRW Inc 319
8.71 Unaxis 322
8.72 United Monolithic Semiconductors GmbH (UMS) 323
8.73 VG Semicon 325
8.74 Vitesse Semiconductor Corp 326
8.75 Wafer Technology Ltd 331
8.76 Watkins-Johnson Communications Inc 333
8.77 WIN Semiconductors Corp 334
Chapter 9. Directory of Leading Suppliers 335
Chapter 10. Appendices 395
10.1 Acronyms 395
10.2 Mergers and Acquisitions 402
10.3 Agreements 404
10.4 Exchange Rates 410